vrf151e VRF151EMP 50v, 150w, 175mhz the vrf151e is a thermally-enhanced version of the vrf151. it is a gold- metallized silicon n-channel rf power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. features ? enhanced package for 30% higher p d ? improved ruggedness v (br)dss = 170v ? 150w with 22db typical gain @ 30mhz, 50v ? 150w with 14db typical gain @ 175mhz, 50v ? excellent stability & low imd ? available in matched pairs ? 30:1 load vswr capability at speci ed operating conditions ? nitride passivated ? refractory gold metallization ? replacement for sd2931-10 w/higher bv ? rohs compliant symbol parameter vrf151e(mp) unit v dss drain-source voltage 170 v i d continuous drain current @ t c = 25c 16 a v gs gate-source voltage 40 v p d total device dissipation @ t c = 25c 390 w t stg storage temperature range -65 to 150 c t j operating junction temperature 200 rf power vertical mosfet maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 100ma) 170 180 v v ds(on) on state drain voltage (i d(on) = 10a, v gs = 10v) 2.0 3.0 i dss zero gate voltage drain current (v ds = 100v, v gs = 0v) 1 ma i gss gate-source leakage current (v ds = 20v, v ds = 0v) 1.0 a g fs forward transconductance (v ds = 10v, i d = 5a) 5.0 mhos v gs(th) gate threshold voltage (v ds = 10v, i d = 100ma) 2.9 3.6 4.4 v microsemi website - http://www.microsemi.com thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.45 c/w caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. m174a 050-4955 rev b 9-2010
1 10 100 0 10 20 30 40 50 vrf151e(mp) dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 375 pf c oss output capacitance v ds = 150v 200 c rss reverse transfer capacitance f = 1mhz 12 class a characteristics symbol test conditions min typ max unit g ps f = 30mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 20 db imd (d3) f = 30mhz, v dd = 50v, i dq (max) = 3.75a, p out = 150w pep -50 imd (d9-d13) f = 30mhz, v dd = 50v, i dq = 250ma, p out = 150w pep -75 functional characteristics symbol parameter min typ max unit g ps f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 18 22 db g ps f = 175mhz, v dd = 50v, i dq = 250ma, p out = 150w 14 d f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 50 % imd (d3) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 1 -30 dbc imd (d11) f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep -60 f 1 = 30mhz, f 2 = 30.001mhz, v dd = 50v, i dq = 250ma, p out = 150w pep 30:1 vswr - all phase angles no degradation in output power 1. to mil-std-1311 version a, test method 2204b, two tone, reference each tone microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.1 1 10 20 1 10 100 250 0 5 10 15 20 25 30 0 2 4 6 8 10 12 0 5 10 15 20 25 0 4 8 12 16 20 c iss v ds(on ) , drain-to-source voltage (v) figure 1, output characteristics i d , drain current (a) i d , drain current (a) t j = 125c v ds , drain-to-source voltage (v) figure 3, capacitance vs drain-to-source voltage c, capacitance (pf) v ds , drain-to-source voltage (v) figure 4, forward safe operating area i d , drain current (v) 4v 5v 6v 7v 8v 9v 10v 14v v gs , gate-to-source voltage (v) figure 2, transfer characteristics 250 s pulse test<0.5 % duty cycle t j = -55c t j = 25c c oss c rss r ds(on) dc line i dmax t j = 125c t c = 75c typical performance curves pdmax 050-4955 rev b 9-2010
vrf151e(mp) 050-4955 rev b 9-2010 60 55 50 45 40 35 30 25 20 0 50 100 150 200 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0 10 -5 10 -4 10 -3 10 -2 10 1.0 -1 0.5 single pulse 0.1 0.3 0.7 0.05 peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: t 1 = pulse duration z jc , thermal impedance (c/w) rectangular pulse duration (seconds) figure 5. maximum effective transient thermal impedance junction-to-case vs pulse duration 0 50 100 150 200 250 0 5 10 15 20 25 30 p out , output power (watts pep) figure 6. imd versus p out imd, intermodulation distortion (db) output power (w pep ) p out , input power (watts pep) figure 7. p out versus p in typical performance curves vdd=50v, idq = 250ma, freq=150mhz vdd=50v, idq = 250ma, freq=150mhz im3 im5 vdd=40v vdd=50v 0.9
vrf151e(mp) rfc1 + 50vdc + + c9 c8 c7 c3 c2 l3 l2 c6 r1 r2 r3 c4 c5 l1 c1 bias 0-12v c10 c11 l4 rf input rf output c1, c2, c8 -- arco 463 or equivalent c3 -- 25pf, unelco c4 -- 0.1uf, ceramic c5 -- 1.0 uf, 15 wv tantalum c6 -- 250pf, unelco j101 c7-- 25pf, unelco j101 c9 -- arco 262 or equivalent c10 -- 0.05uf, ceramic c11 -- 15uf, 60wv electrolytic dut 175 mhz test circuit 050-4955 rev b 9-2010 + 50vdc + c8 c4 c6 c7 l2 c3 r2 r1 c5 l1 c2 c1 bias 0-12v c9 c10 rf input rf output c1 -- 470 pf dipped mica c2, c5, c6 - c9 -- 0.1uf smt c3 -- 200pf atc 700c c4 -- 15pf, atc 700c c10 -- 10uf, 100v electrolytic l1 - vk200-4b l2 -- 2 ferrite beads, 2.0 uh r1, r2 -- 51 7 , 1 w carbon r3 -- 3.3 7 , 1 w carbon t1 -- 9:1 transformer t2 -- 1:9 transformer dut t2 r3 30 mhz test circuit
vrf151e(mp) a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain .5? soe package outline all dimensions are .005 dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54 050-4955 rev b 9-2010 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157, 886 6,939,743 7,342,262 and foreign patents. us and foreign patents pending. all rights reserved. adding mp at the end of p/n speci es a matched pair where v gs(th) is matched between the two parts. v th values are marked on the devices per the following table. code vth range code 2 vth range a 2.900 - 2.975 m 3.650 - 3.725 b 2.975 - 3.050 n 3.725 - 3.800 c 3.050 - 3.125 p 3.800 - 3.875 d 3.125 - 3.200 r 3.875 - 3.950 e 3.200 - 3.275 s 3.950 - 4.025 f 3.275 - 3.350 t 4.025 - 4.100 g 3.350 - 3.425 w 4.100 - 4.175 h 3.425 - 3.500 x 4.175 - 4.250 j 3.500 - 3.575 y 4.250 - 4.325 k 3.575 - 3.650 z 4.325 - 4.400 v th values are based on microsemi measurements at datasheet conditions with an accuracy of 1.0%.
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